High current. Three current gain selections. High power dissipation capability. Exposed heatsink for excellent thermal and electrical conductivity.
PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BC868. Download datasheet.
In stock
Specifications ; Collector-Emitter Saturation Voltage: 600 mV ; Maximum DC Collector Current: 2 A ; Pd - Power Dissipation: 500 mW ; Gain Bandwidth Product fT: 140 ...
In stock
BC869,115 ; DC Current Gain (hFE) (Min) @ Ic, Vce. 85 @ 500mA, 1V ; Power - Max. 1.2 W ; Frequency - Transition. 140MHz ; Operating Temperature. 150°C (TJ).
In stock
Specifications ; Collector-Emitter Saturation Voltage: 600 mV ; Maximum DC Collector Current: 2 A ; Pd - Power Dissipation: 1.2 W ; Gain Bandwidth Product fT: 140 ...
In stock
BC869-25,115 ; DC Current Gain (hFE) (Min) @ Ic, Vce. 160 @ 500mA, 1V ; Power - Max. 500 mW ; Frequency - Transition. 140MHz ; Operating Temperature. 150°C (TJ).
Medium Power Bipolar Transistors | Status : Active. BC869. Package Type:SOT-89; Packing Info: Tape: 1K/Reel , 40K/Ctn;; Category:Medium Power Bipolar ...
Nov 8, 2004 · Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. TYPE NUMBER. PACKAGE. NAME.
BC869-25. Medium Power Bipolar Transistors | Status : Active. BC869-25. Package Type:SOT-89; Packing Info: Tape: 1K/Reel , 40K/Ctn;; Category:Medium Power ...