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Specifications ; Collector-Emitter Saturation Voltage: 200 mV ; Maximum DC Collector Current: 100 mA ; Pd - Power Dissipation: 330 mW ; Gain Bandwidth Product fT:
$0.32
Order today, ships today. BC849CE6327HTSA1 – Bipolar (BJT) Transistor NPN 30 V 100 mA 250MHz 330 mW Surface Mount PG-SOT23 from Infineon Technologies.
INFINEON TECHNOLOGIES BC849CE6327 | Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23 - This product is available in Transfer Multisort Elektronik.
Transistor Type, NPN ; Operating Temperature, 150°C (TJ) ; Frequency - Transition, 250MHz ; Supplier Device Package, PG-SOT23 ; Vce Saturation (Max) @ Ib, Ic, 600mV ...
BC849C NPN Silicon af Transistor . For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between ...
$0 to $0
... BC849CE6327 Part Details, 1690. 1334 $0.0270; 223 $0.0375; 1 $0.0600. $0.0270 ... BC849CE6327 Part Details, 936. 668 $0.0500; 81 $0.0750; 1 $0.2500. $0.0500 / $ ...
INFINEON TECHNOLOGIES BC849CE6327 | Transistor: NPN; bipolar; 30V; 0,1A; 0,33W; SOT23 - Producto disponible en Transfer Multisort Elektronik.
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