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BC847S · High current gain · Low collector-emitter saturation voltage · Two (galvanic) internal isolated transistors with good matching in one package · BC846S / U, ...
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Designed for general-purpose amplifier applications and features low VCE <0.5V. ... Combination of low saturation voltage and high gain low VCE(sat) NPN ...
Order today, ships today. BC847S – Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 200mA 200MHz 300mW Surface Mount SC-88 (SC-70-6) from onsemi.
This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07. Waiting. Product Overview.
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Order today, ships today. BC847S-AQ – Bipolar (BJT) Transistor Array 2 NPN (Dual) 45V 100mA 100MHz 250mW Surface Mount SOT-363 from Diotec Semiconductor.
NPN Silicon AF Transistor Array. • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage
NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Article number, BC847S-AQ. Type, SMD. Package, SOT-363. Collector Emitter Voltage, VCEO, 45 V. DC Collector Current, IC, 100 mA. Polarity, pol, NPN.
BC847S. PD. Total Device Dissipation. Derate above 25°C. 300. 2.4. mW. mW/°C. RθJA. Thermal Resistance, Junction to Ambient. 415. °C/W. BC847S. SC70-6. Mark: 1C.