Ideally Suited for Automatic Insertion. • Epitaxial Planar Die Construction. • Complementary NPN Types Available (BC817). • For switching and AF Amplifier ...
Junction and Storage Temperature. TJ, Tstg. -55 to +150. °C. Stresses exceeding those listed in the Maximum Ratings table may damage the device.
View datasheets for BC807-(25,40)WT1G by ON Semiconductor and other related components here.
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Order today, ships today. BC807-40-7-F – Bipolar (BJT) Transistor PNP 45 V 500 mA 100MHz 310 mW Surface Mount SOT-23-3 from Diodes Incorporated.
BC807-16 THRU BC807-40. Features. Internal Structure. Marking: BC807-16: 5A. BC807-25: 5B. BC807-40: 5C. • Halogen Free. “Green” Device (Note 1). • Moisture ...
Junction and Storage Temperature. TJ, Tstg. -55 to +150. °C. Stresses exceeding those listed in the Maximum Ratings table may damage the device.
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*BC807-16 / -25 / -40. PD. Total Device Dissipation. Derate above 25°C. 350. 2.8. mW. mW/°C. RθJA. Thermal Resistance, Junction to Ambient. 357. °C/W. Symbol.
NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview ...
BC807-16. 5A. BC807-25. 5B. BC807-40. 5C. Power dissipation. PD. 0.3. W. Collector-base voltage, emitter open. IC = -10 μA, IE = 0.
BC807-16/-25/40. 0.3 Walts, PNP Plastic-Encasulate Transistor. ✧Epitaxial planar die construction. ✧For switching, AF driver and amplifier applications.