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The ATF-26884 is a high perfor- mance gallium arsenide Schottky- barrier ... Proven gold based metallization systems and nitride passivation assure a rugged,.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride ...
2-16 GHz General Purpose Gallium Arsenide FET Others with the same file for datasheet: ATF-26884, ATF26884 · ATF-26884-TR1 datasheet pdf Agilent ...