$0.39
AO6601 ; Gate Charge (Qg) (Max) @ Vgs. 12nC @ 10V ; Input Capacitance (Ciss) (Max) @ Vds. 285pF @ 15V ; Power - Max. 1.15W ; Operating Temperature. -55°C ~ 150°C ( ...
The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter ...
30V Complementary MOSFET.
The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter ...
In stock
AO6601ALPHA & OMEGA SEMICONDUCTOR ; Gate-source voltage. ±12V ; On-state resistance. 60/115mΩ ; Mounting. SMD ; Gate charge. 4.7/2.8nC ; Kind of channel. enhanced ...
The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, ...
In stock
AO6601-VB VBsemi Elec $0.1199 - 20V 4.2A 36mΩ@4.5V,4.2A 1PCSNChannel+1PCSPChannel SOT-23-6 MOSFETs ROHS datasheet, price, inventory C557960.
Rating
(186) · $11,386,968.00
AO6601 Specifications ; Input Capacitance (Ciss) (Max) @ Vds, 285pF @ 15V ; Power - Max, 1.15W ; Operating Temperature, -55°C ~ 150°C (TJ) ; Mounting Type, Surface ...
AO6601 ; Description: 1PCSN-Channel&1PCSP-Channel TSOP-6-1.5mm MOSFETs ROHS ; Datasheet: Download ; Source: JLCPCB ; Assembly Type: SMT Assembly. A PCB assembly ...
AO6601 Datasheet. Part #: AO6601. Datasheet: 207Kb/7P. Manufacturer: Alpha & Omega Semiconductors. Description: Complementary Enhancement Mode Field Effect ...