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Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, ...
... 2SK973S datasheet. 2SK973S manufactured by: Hitachi Semiconductor, Silicon N-Channel MOS FET Others with the same file for datasheet: 2SK973 · 2SK973S datasheet ...
These devices offer the circuit designer an economical solution for positive and negative voltage detection. The circuit consists of two comparator channels ...
2SK973(S) SPECIFICATIONS ; Drain-source On Resistance-Max, 0.5 ohm ; DS Breakdown Voltage-Min, 60.0 V ; FET Technology, METAL-OXIDE SEMICONDUCTOR ; JESD-30 Code, R- ...
2SK973S MOSFET. Datasheet pdf. Equivalent. Type Designator: 2SK973S Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
Item. Symbol. Ratings. Unit. Drain to source voltage. VDSS. 60. V. Gate to source voltage. VGSS. ±20. V. Drain current. ID. 2. A. Drain peak current.
Low on-resistance. • High speed switching. • Low drive current. • 4 V gate drive device. – Can be driven from 5 V source. • Suitable for motor drive, ...
Product, VB Package, VDS(V), VGS, Vthyp(V), ID(A), Technology. 2SK973S, TO252, 60V, 20(±V), 1.7V, 18A. K973S. Similar type recommendation.