2SK4013(Q) Toshiba MOSFET N-Ch FET VDSS 800V RDS 1.35 Ohm Yfs 5.0 datasheet, inventory, & pricing.
2SK4013. 2013-11-01. 1. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ). 2SK4013. Switching Regulator Applications. • Low drain-source ...
400V - 900V MOSFETs, N-ch MOSFET, 800 V, 1.7 Ω@10V, TO-220SIS, π-MOSⅣ｜Find data sheet and product information.
Drain-source breakdown voltage. V (BR) DSS. ID = 10 mA, VGS = 0 V. 800. ⎯. ⎯. V. Gate threshold voltage. Vth. VDS = 10 V, ID = 1 mA.
2SK4013 Product details ... Low drain-source ON resistance: RDS (ON)= 1.35 Ω(typ.) ... High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage ...
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2SK4013 N Channel MOSFET, 800V 6A. Pulse I DP 18 A. • High forward transfer admittance: |Yfs| = 5.0 S (typ.). Optimised for Switching Regulator Applications ...
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2SK4013TOSHIBA ; Power dissipation. 45W ; Case. TO220FP ; Gate-source voltage. ±30V ; On-state resistance. 1.35Ω ; Mounting. THT.
$993.85
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This item can be returned in its original condition for a full refund or replacement within 30 days of receipt. You may receive a partial or no refund on ...
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2SK4013 Toshiba N-Channel Mosfet 800V 6A 45W TO220F NEW [4 pcs] #BP ; DARISUS GmbH (64537) ; Approx. $13.56. + $8.68 shipping ; Item description from the seller ...