Part #: 2SK3080. Download. File Size: 49Kbytes. Page: 9 Pages. Description: Silicon N Channel MOS FET High Speed Power Switching.
Features, Applications. Silicon N Channel MOS FET High Speed Power Switching Low on-resistance R DS(on) 20 m typ. = 15 A) 4V gate drive devices.
2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition May 1998 Features Low on-resistance R DS(on) = 20 mΩ typ.
Item. Symbol Min. Typ. Max. Unit. Test Conditions. Drain to source breakdown voltage V(BR)DSS. 30. —. —. V. ID = 10mA, VGS = 0.
2SK3080 MOSFET. Datasheet pdf. Equivalent. Type Designator: 2SK3080 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
Part No. 2SK3080 ; Description, Silicon N Channel MOS FET High Speed Power Switching ; File Size, 48.48K / 9 Page ; Maker, HITACHI[Hitachi Semiconductor]. JITONG ...
Mar 30, 2005 · Low on-resistance R DS(on) = 20 mΩ typ . (V GS = 10V, ID = 15 A) • 4V gate drive devices . • High speed switching Outline TO–220AB D G 1 2 S ...
2SK308 Datasheet. 49Kb/9P. Part #: 2SK3080. Manufacturer: Hitachi Semiconductor. Description: Silicon N Channel MOS FET High Speed Power Switching.
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2SK3080, UTG, TO-220, 8349. Inquiry. SK3080 price|SILITECH Components Inc ... 2SK3080, VBSEMI, Original stock,24-hour delivery, 19744. Inquiry · SK3080 price| ...