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2SK3019-TP ; Technology. MOSFET (Metal Oxide) ; Drain to Source Voltage (Vdss). 30 V ; Current - Continuous Drain (Id) @ 25°C · 100mA (Ta) ; Drive Voltage (Max Rds ...
2SK3019. Features. Maximum Ratings. • ESD Protected up to 2KV(HBM). • Moisture Sensitivity Level 1. • Halogen Free. “Green” Device (Note 1). • Epoxy Meets ...
Part Number 2SK3019, Number of Functions Single, Channel N, Drain-Source Voltage VDS (V) 30, Gate-Source Voltage VGS (V) ±20, Drain Current
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Small signal 20V dual N-channel MOSFET meticulously designed for high-speed switching. Learn More.
2SK3019. Transistor. Rev.C. 1/3. 2.5V Drive Nch MOS FET. 2SK3019. ○Structure. Silicon N-channel. MOSFET. ○Applications. Interfacing, switching (30V, 100mA).
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2SK3019. Packaging: Reel. Brand: ROHM Semiconductor. Configuration: Single. Fall Time: 80 ns. Height: 0.7 mm. Length: 1.6 mm. Product: MOSFET Small Signals.
Parameter. Symbol. Test Condition. Min. Typ. Max. Units. Off Characteristics. Drain-Source Breakdown Voltage VDS. VGS = 0V, ID = 10µA.
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2SK3019 Shikues $0.0222 - 30V 100mA 8Ω@4V,10mA 150mW 1.5V@100uA 1PCSNChannel SOT-523-3 MOSFETs ROHS datasheet, price, inventory C475595.
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2SK3019 Jiangsu Changjing Electronics Technology Co., Ltd. $0.0324 - 30V 100mA 8Ω@4V,10mA 150mW 1.5V 1PCSNChannel SOT-523-3 MOSFETs ROHS ...
2SK3019. 30V N-Channel MOSFET. Product Summary. V(BR)DSS. RDS(on)TYP. ID. 30V. 1.1Ω@4.5V. 100mA. 1.5Ω@2.5V. Feature. ○. Low on-resistance. ○. Fast switching ...