N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES. Features High speed switching. Low on-resistance. No secondary breakdown. Low driving power. High voltage
9.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 15 m typ. High speed switching Low drive current 4 V gate drive device can be driven from 5 V source ...
Item. Symbol. Rating. Unit. Remarks. Drain-source voltage. VDS. 60. Continuous drain current. ID. ±50. Pulsed drain current. ID[puls].
Type: 2SK2809-01MR. State: DISCON. Package: TO-220F. Product handling category: Discontinued products. Countries and regions covered.
2SK2809-01MR, TO220F, 60V, 20（±V）, 2.5V, 70A. 2SK2809 · K2809-01MR · K2809. Similar type recommendation. VBMB1615. TO220F. 60V. 20（±V）. 2.5V. 70A. View all ...
In stock
10pcs/lot K2809 2SK2809-01MR TO-220 FET 50A 60V transistor. Delivery. Shipping: US $3.00. Estimated delivery between Jun 12 - 23 ,item ships within 8 days.
Part No. 2SK2809 2SK2809-01MR. Description, Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1500uF; Voltage: 16V; Case Size: 10x20 mm; ...
Description, 2SK2809-01MR FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET..
Discontinued Product Information - Power MOSFET, Diode Package Marking Specification Change ; TO-220F. 2SK1946-01MR · 2SK2098-01MR · 2SK2098-53MR · 2SK2809-01MR.