Item. Symbol. Ratings. Unit. Drain-source voltage. VDS. 600. Continuous drain current. ID. ±10. Pulsed drain current. ID(puls]. ±36. Gate-source voltage.
Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee
2SK2761-01MR. N-channel MOS-FET. FAP-IIS Series. 600V. 1Ω. 10A 50W. > Features. > Outline Drawing. - High Speed Switching. - Low On-Resistance. - No Secondary ...
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Model Number2SK2761-01MR ; Package TypeThrought Hole ; ConditionNew ; OriginMainland China ; Item description. N-channel MOS-FET. 600V 10A 50W. 1Ω. View All.
2SK2761-01MR MOSFET. Datasheet pdf. Equivalent. Type Designator: 2SK2761-01MR Type of Transistor: MOSFET Type of Control Channel: N ...
Fuji 2SK2761-01MR technical specifications, attributes, and parameters. Technical. Continuous Drain Current (ID), 10 A. Drain to Source Voltage (Vdss) ...
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Model Number2SK2761-01MR; Package TypeThrought Hole; ConditionNew; OriginMainland China. Item description. N-channel MOS-FET. 600V 10A 50W. 1Ω. View All.
Description, 2SK2761-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Gu.
2SK2761-01MR · FUJI-2SK2761-01MR Datasheet 357Kb / 2P, N-channel MOS-FET. More results. Similar Description - 2SK2761. Manufacturer, Part #, Datasheet ...
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Fuji Electric. 2sk2761 Datasheet. You can find 2sk2761 Datasheet.