N-channel MOS-FET 900V 2W 8A 100W. >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage
2SK2655-01R. N-channel MOS-FET. FAP-IIS Series. 900V. 2Ω. 8A 100W. > Features ... ID=f(VDS): D=0,01, Tc=25°C. ↑. Zth(ch-c). [K/W]. Transient Thermal impedance.
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2SK2655-01 Fuji Original New Semiconductor ; Item Number. 143670515591 ; Quality. Original ; Product Code. 2SK2655-01 ; Accurate description. 4.9 ; Reasonable ...
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View Evaluation kits and Reference designs for Fuji 2SK2655-01R. Descriptions. Descriptions of Fuji 2SK2655-01R provided by its distributors.
Datasheet pdf. Equivalent. Type Designator: 2SK2655-01R Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): ...
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2pcs/lot 2SK2655-01R TO-3P 2S K2655 2SK2655 N-channel MOS. 1/1. 1. US $2.90/ lot. (2 ... 2SK2655-01 2SK2655-0 2SK265501 2SK26550 2SK2655-R 2SK2655R K2655-01R K ...
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Item. Symbol. Ratings. Unit. Drain-source voltage. VDS. 900. Continuous drain current. ID. ±8. Pulsed drain current. ID(puls]. ±32. Gate-source voltage.
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Manufactured by FUJI ELECTRIC ; Part #, 2SK2655 ; Order toll free: 800.884.5500 ; Order international: +1 609.288.9393 ; Are you in EU? Call: +44 1782 576800.
$7.76
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