N-channel MOS-FET FAP-II Series. > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage
2SK2520-01MR. 200V. 0,4Ω 10A 30W. FAP-II Series. > Characteristics. Typical Output Characteristics. Drain-Source On-State Resistance. Typical Transfer ...
Zero gate voltage. Loss. VDs=200V Ten= 25°C. 10. 500 на drain current. Vos = OV. Loss. Tch=125°C. 0.2. 1.0. ΜΑ. Gate-source. VGs=±30V leakage current.
2SJ401 : P-channel MOS Type ( High Speed, High Current Switching, DC-DC Converter, Relay Drive And Motor Drive Applications ). 82S23 : 256-bit TTL Bipolar Prom ...
2SK2520-01MR MOSFET. Datasheet pdf. Equivalent. Type Designator: 2SK2520-01MR Type of Transistor: MOSFET Type of Control Channel: N ...
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 200V 0,4Ω ...
2SK2520-01MR ; DESCRIPTION: FUSE CARTRIDGE 1A 600VAC 5PK ; Applications : Multi-Meters ; Fuse Type : Cartridge ; Mounting Type : Holder ; Response Time : Fast.
SGD 1.50 In stock
High Voltage Switching power Mosfet. Fuji Electric 200V / 10A / 30Watt. Application : Switching Regulator , UPS, DC-DC Converter, Power Amplifier.
2SK2520-01MR datasheet, 2SK2520-01MR pdf, 2SK2520-01MR data sheet, datasheet, data sheet, pdf, Fuji Electric, N-channel MOS-FET.
2SK2520 Datasheet. Part #: 2SK2520-01MR. Datasheet: 192Kb/2P. Manufacturer: Fuji Electric. Description: N-channel MOS-FET. 1 Results.