2SK2329(L), 2SK2329(S). Silicon N Channel MOS FET. REJ03G1008-0200. (Previous: ADE-208-1356). Rev.2.00. Sep 07, 2005. Application. High speed power switching.
Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source
Part #: 2SK2329S. Download. File Size: 44Kbytes. Page: 1 Pages. Description: Silicon N-Channel MOSFET. Manufacturer: Guangdong Kexin Industrial Co.,Ltd.
Low on–resistance. • High speed switching. • Low drive current. • 2.5 V gate drive device can be driven from. 3 V source. • Suitable for Switching regulator ...
2SK2329(L), 2SK2329(S). 2. Absolute Maximum Ratings (Ta = 25°C). Item. Symbol. Ratings. Unit. Drain to source voltage. VDSS. 30. V. Gate to source voltage. VGSS.
The 2SK2329-01STL-E is a Silicon N Channel MOSFET.
2SK2329S Hitachi, Ltd – Price, Stock & Datasheet - WIN SOURCE
www.win-source.net › ... › Hard To Find
The 2SK2329S is a medium-popularity power MOSFET transistor manufactured by Hitachi, Ltd. It has a fake threat of 29% in the open market and is currently in ...
2SK2329S MOSFET. Datasheet pdf. Equivalent. Type Designator: 2SK2329S Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation ( ...
Product, VB Package, VDS(V), VGS, Vthyp（V）, ID(A), Technology. 2SK2329S, TO252, 30V, 20（±V）, 1.7V, 70A. 2SK2329STL-E.
2SK2329S ; Features · Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching ...