Item. Symbol. Ratings. Unit. Drain to source voltage. VDSS. 60. V. Gate to source voltage. VGSS. ±20. V. Drain current. ID. 50. A. Drain peak current.

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source

2SK2203. Silicon N-Channel MOS FET. November 1996. Application. High speed power ... 2SK2203. 2. Absolute Maximum Ratings (Ta = 25°C). Item. Symbol. Ratings. Unit.

Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter ...

2SK2203 Silicon N-channel MOSFET . Application. Features. Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from ...

2SK2203 datasheet. 2SK2203 manufactured by: Hitachi Semiconductor, Silicon N-Channel MOS FET · 2SK2203 datasheet pdf Hitachi Semiconductor Download 2SK2203 ...

Part #, Manufacturer, Description, Stock, Price, Buy. 2SK2203, HITACHI, TO New and original,In Stock, 14532. Inquiry. 2SK2203 price|Direct Components.

Description, Silicon NPN Triple Diffused From old datasheet system ; File Size, 136.75K / 3 Page ; Part No. 2SK2203 ; Description, Silicon N Channel MOS FET

Part Number:2SK2203. Part Type:N-Channel MOSFET. Power Dissipation (PD):60 W. Drain current (ID):50 A. Drain-source voltage (VDSS):60 V. Package:4-293. More N ...

Partname: 2SK2203 ; Description: Power switching MOSFET ; Manufacturer: Hitachi Semiconductor ; Package: TO-3PFM ; Datasheet: PDF (50.1K). Click here to download ...