Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof.

Page 1. 2SK2023-01. N-channel MOS-FET. FAP-IIA Series. 600V 4,5Ω 3A 40W. > Features. > Outline Drawing. - High Speed Switching. - Low On-Resistance. - No ...

2SK2023-01 N-channel MOSFET Features. High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee ...

Part #: 2SK2023-01. Download. File Size: 66Kbytes. Page: 2 Pages. Description: Fast Switching Speed. Manufacturer: Inchange Semiconductor Company Limited.

Product, VB Package, VDS(V), VGS, Vthyp（V）, ID(A), Technology. 2SK2023-01, TO220, 650V, 30（±V）, 3.5V, 2A. K2023-01. Similar type recommendation.

... Fuji Electric Download 2SK2023-01 datasheet from. Fuji Electric, pdf 205 kb. 2SK2022-01M, View 2SK2023-01 to our catalog, 2SK2024-01. © 2024 - Datasheet Catalog ...

Part Number:2SK2023-01. Part Type:N-Channel MOSFET. Power Dissipation (PD):40 W. Drain current (ID):3 A. Drain-source voltage (VDSS):600 V. Package:4-234. More ...

Part No. 2SK2023-01 ; Description, N-channel MOS-FET ; File Size, 200.88K / 2 Page ; Maker, FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]. JITONG TECHNOLOGY

2SK2023-01 MOSFET. Datasheet pdf. Equivalent. Type Designator: 2SK2023-01. Type of Transistor: MOSFET Type of Control Channel: N ...

IDS, 3A. UGS, -. RDS(ON), <4.5Ω. Ptot, 50W. TON/TOFF, 25/50nS. the 2SK2023-01 is a silicon N - vertical MOSFET transistor, Uds=600V, Ids=3A.