The 2SJ479S is a Pch Single Power Mosfet -30V -30A 35Mohm LDPAK(S)-(1)/To-263.
2SJ479 Datasheet(PDF) - Hitachi Semiconductor - Alldatasheet.com
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2SJ479 Product details. Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices.
Part #: 2SJ479S. Download. File Size: 91Kbytes. Page: 8 Pages. Description: Silicon P Channel MOS FET. Manufacturer: Renesas Technology Corp.
Silicon P Channel DVûL MOS FET High Speed Power Switching, 2SJ479S datasheet pdf Hitachi Semiconductor Download 2SJ479S datasheet from
[PDF] 2SJ479(L),2SJ479(S) Datasheet - Renesas Electronics Corporation
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2SJ479(L), 2SJ479(S). Silicon P Channel MOS FET. REJ03G0866-0300. Rev.3.00. Jun 05, 2006. Description. High speed power switching. Features. • Low on- ...
Renesas 2SJ479S is a Silicon MOSFET rated at -30V, -30A, 0.035Ω Rdson(max) in LDPAK(S)-(1)/TO-263. Datasheet. Device Parameter, Value feedback*. Manufacturer ...
The Hitachi 2SJ479S is a balanced supply and demand integrated circuit manufactured by Hitachi, Ltd. It has a medium popularity in the market and a fake ...
Features, Applications. Silicon P Channel DVL MOS FET High Speed Power Switching Low on-resistance R DS(on) 25 m typ. 4V gate drive devices.
Product, VB Package, VDS(V), VGS, Vthyp（V）, ID(A), Technology. 2SJ479S, TO263, -30V, 20（±V）, -2.5V, -75A. J479S. Similar type recommendation.
2SJ479S MOSFET. Datasheet pdf. Equivalent. Type Designator: 2SJ479S Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): ...