Size:204K inchange semiconductor 2sd873.pdf · 2SD873. isc Silicon NPN Power Transistor 2SD873DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V ...
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2SD873. DESCRIPTION. ·Collector-Emitter Breakdown Voltage-. : V(BR)CEO= 140V (Min). ·High Power Dissipation. ·High Current Capability. APPLICATIONS. ·High power ...
DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Current Capability. APPLICATIONS
Jul 16, 2018 · Part Number, 2SD873. Manufacturer, Toshiba (https://www.toshiba.com/). Title, NPN Transistor. Description, SILICON NPN TRIPLE DIFFUSED TYPE ...
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NEW TRANSISTOR 2SD873 D873 NSC SAME DAY SHIPPING! LOCATION BOX#2 ; Country/Region of Manufacture. Japan ; MPN. 2SD873 ; Accurate description. 4.9 ; Reasonable ...
2SD873. 24 ic. 'CE. COMMON EMITTER. Tc = 25°C. 1000. |. 800. —600 yoo. 100. I R = oOmA ... 2SD873. SAFE OPERATING AREA f th(t) ~ t. (1) NO HEAT S INK. (2) T c = 2 ...
Part #: 2SD873 ... Manufacturer: Toshiba America Electronic Components, Inc. Description: Power Bipolar Transistor, 16A I(C), 140V V(BR)CEO, 1-Element, NPN, ...
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD873 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V ...