2SD859. DESCRIPTION. ·Collector-Emitter Breakdown Voltage-. : V(BR)CEO= 250V(Min). ·High Collector Power Dissipation. APPLICATIONS. ·Designed for AF power ...
Size:212K inchange semiconductor 2sd859.pdf · 2SD859. isc Silicon NPN Power Transistor 2SD859DESCRIPTIONCollector-Emitter Breakdown Voltage-: V ...
Sep 21, 2020 · Part Number, 2SD859. Manufacturer, INCHANGE. Title, NPN Transistor. Description, ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ...
2SD859 Silicon NPN Power Transistor . DESCRIPTIONCollector-Emitter Breakdown Voltage: V(BR)CEO= 250V(Min)High Collector Power Dissipation.