Size:208K inchange semiconductor 2sd857.pdf · 2SD857. isc Silicon NPN Power Transistor 2SD857DESCRIPTIONCollector-Emitter Breakdown Voltage-: V ...
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2SD857 "Original" Panasonic (Matsushita) Transistor 2 pcs ; Quantity. More than 10 available ; Item Number. 291276484932 ; Brand. Panasonic ; Model. 2SD857 ...
DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SB762.
2SD857 Silicon NPN Power Transistor . DESCRIPTIONCollector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min)Good Linearity of hFEWide Area of Safe ...
Classification of hFE. The 2SD857 transistor can have a current gain of 40 to 250. The gain of the 2SD857-P will be in the range from 120 to 250, for the 2SD857 ...
The 2SD857 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SD857 transistor has a positively charged layer between two ...
Part Number, 2SD857. Manufacturer, INCHANGE. Title, Silicon NPN Power Transistor. Description, ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ...
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-. the D857 is a silicon NPN transistor, Uce = 60V, Ic = 4A, applications: power transistor. Picture: -. Source: 2SD857. Advanced Information for D857. OEM ...