2SD555. DESCRIPTION. ·Collector-Emitter Breakdown Voltage-. : V(BR)CEO= 200V (Min). ·High Power Dissipation. ·Complement to Type 2SB600. APPLICATIONS. ·Designed ...
Size:207K inchange semiconductor 2sd555.pdf · 2SD555. isc Silicon NPN Power Transistor 2SD555DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V ...
Jan 1, 2010 · Reading the NEC datasheet tells me the MJ devices will perform better than the 2s devices. Improved power handling, improved current handling, ...
May 4, 2006 · Anyone know of a suitable non-NTE substitute for these transistors? Thanks, Mike.
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The 2SD555 Small Signal Bipolar Transistors is only supported for customers who have already adopted these products.
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