Size:206K inchange semiconductor 2sd334.pdf · 2SD334. isc Silicon NPN Power Transistor 2SD334DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V ...
Silicon NPN Power Transistor. DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V (Min) ·Wide Area of Safe Operation APPLICATIONS
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Part Number, 2SD334. Manufacturer, Panasonic Semiconductor. Title, Si NPN Transistor. Description, www..com ... Features ... Published, Jan 12, 2008.
Si NPN Diffused Junction Mesa - 2SD334 High Power Amplifier. Features ○ Wide Area Of Safe Operation (ASO) ○ Suitable for voltage regulator.
The device can supply 1.5 A of output current with a dropout voltage of 300 mV. Operating quiescent current is 1 mA, dropping to less than 1 µA in shutdown.
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Part Number:2SD334. Part Type:NPN Transistor. Collector power dissipation (PC): [Collector temperature (Tc) = 25 ℃]75 W. Collector current (IC):6 A. Collector ...
the 2SD334 is a silicon NPN transistor, Uce = 80V, Ic = 6A, applications: power transistor.
Part No. 2SD334 ; Description, SI NPN DIFFUSED JUCTION MESA ; File Size, 251.72K / 6 Page ; Maker, Panasonic Corporation Panasonic Semiconductor Sanyo Semicon ...
Partname: 2SD334 ; Description: Si NPN diffused junction mesa. High power amplifier. ; Manufacturer: Panasonic (Matsushita) ; Package: TO-3 ; Pins: 3.