Features ○ High speed switching ○ High D.C. current gain ○ Low saturation voltage ○ High reliability. Applications ○ Switching regulators
Size:209K inchange semiconductor 2sd1157.pdf · 2SD1157. isc Silicon NPN Power Transistor 2SD1157DESCRIPTIONCollector-Emitter Breakdown Voltage-: V ...
DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) • High DC Current Gain- : hFE= 250V(Min.) @IC= 0.5A
£11.99
2SD1157 ; Pinout Equivalence Number, N/A ; Surface Mounted Yes/No, NO ; Maximum Collector Power Dissipation (Pc), 25 W ; Maximum Collector-Base Voltage |Vcb|, 80 V.
$9.12
Free Shipping 10PCS 2SD1157 Encapsulation/Package:TO220,TRIPLE DIFFUSED PLANER TYPE HIGH. Delivery. Free Shipping. Estimated delivery between May 11 - 17.
$2,630.00
2SD1157 ; DESCRIPTION: DUAL SENSOR PRESS CALIBTR 36 PSI ; Manufacturer : Fluke Electronics ; For Use With/Related Products : Manometers ; Part Status : Active.
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Description: 2SD1157 is a NPN silicon epitaxial transistor manufactured by Fuji Electric. Features: - High breakdown voltage - Low collector-emitter ...
Part No. 2SD1157 ; Description, isc Silicon NPN Power Transistor ; File Size, 82.91K / 2 Page ; Maker, Inchange Semiconductor Company Limited. JITONG TECHNOLOGY ( ...
MX$10.73
Silicon NPN Power Transistor; Features; High speed switching; High D. C. current gain; Low saturation voltage; High reliability. Aplicaciones.
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