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2SC5433. 4. Preliminary Data Sheet. 2SC5433 S PARAMETER. VCE = 3 V, IC = 10 mA, Z0 = 50 Ω. FREQUENCY. S11. S21. S12. S22. MHz. MAG. ANG. MAG. ANG. MAG. ANG. MAG.
2SC5433 Transistor Datasheet pdf, 2SC5433 Equivalent. Parameters and Characteristics.
2SC5433 from www.alldatasheet.com
Part #: 2SC5433. Download. File Size: 59Kbytes. Page: 8 Pages. Description: NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION.
Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5007 PACKAGE DIMENSIONS (in mm) 1.4 ± 0.05 0.8 ± 0.1 ...
PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE • Ultra super ...
2SC5433 from www.alldatasheet.com
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES
Features, Applications. NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE Ultra super mini-mold thin flat package × 0.59 ...
Details, datasheet, quote on part number: 2SC5433-T1. Part, 2SC5433-T1. Category. Description, Reduced Noise High Frequency Amplification Transistor. Company ...
Part #: 2SC5433FB ; Part Category: Transistors ; Manufacturer: Renesas Electronics ; Description: RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, NPN.
2SC5433 - Reduced noise high frequency amplification transistor NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION ; Part No. 2SC5433 ...