Collector-emitter voltage, VCEO, 12, V. Electrical Characteristics. Characteristics, Symbol, Condition, Value, Unit. Insertion Gain (Typ.) |S21|2, f=1GHz, 12 ...
2SC5066-O,LF Toshiba RF Bipolar Transistors Radio-Frequency Bipolar ... 12 V. Emitter- Base Voltage VEBO: 3 V. Maximum Operating Temperature: + 125 C.
Order today, ships today. 2SC5066-O,LF – RF Transistor NPN 12V 30mA 7GHz 100mW Surface Mount SSM from Toshiba Semiconductor and Storage.
Missing: V | Show results with:V
Mar 1, 2014 · (1) VCE = 5 V, IC = 10 mA, f = 500 MHz. -. 17. -. Insertion gain. │S21e│. 2. (2) VCE = 5 V, IC = 10 mA, f = 1 GHz. 8.5. 12. -. dB. NF (1). VCE ...
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2SC5066 TOSHIBA $0.1014 - 12V 100mW 30mA NPN SOT-323(SC-70) Bipolar Transistors - BJT ROHS datasheet, price, inventory C24024.
Missing: V | Show results with:V
Series, 2SC5066 ; Technology, Si ; Transistor Polarity, NPN ; DC Collector/Base Gain hfe Min, 80 ; Collector- Emitter Voltage VCEO Max, 12 V.
2SC5066 ; Collector-Emitter Breakdown Voltage (Vceo). 12V ; Power Dissipation (Pd). 100mW ; Collector Current (Ic). 30mA ; Transistor Type. NPN ; In Stock · 0.
Missing: V | Show results with:V
2SC5066 Transistor Datasheet pdf, 2SC5066 Equivalent. Parameters and ... Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO.
2SC5066 ; Capacitance @ Frequency : - ; Current - Peak Pulse (10/1000µs) : 157A ; Operating Temperature : -55°C ~ 175°C (TJ) ; Package / Case : DO-218AB ; Part ...
2SC5066. 2003-03-19. 1. TOSHIBA Transistor Silicon NPN Epitaxial Planar Type. 2SC5066 ... ïS21eï2 (1) VCE = 5 V, IC = 10 mA, f = 500 MHz. ¾. 17. ¾. Insertion gain.
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