SMD Type Silicon NPN Epitaxial 2SC4666 Transistors IC Features High hFE: hFE = 600 3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) ...
Size:261K toshiba 2sc4666.pdf. 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Unit: mm ...
2SC4666 DataSheet - Toshiba America Electronic Components, Inc.
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Part #: 2SC4666 ... Manufacturer: Toshiba America Electronic Components, Inc. Description: Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, ...
2sc4666 datasheet pdf. POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply ... 2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 ...