FEATURES. • Low noise and high gain. NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz. NF = 1.8 dB TYP., Ga = 9.0 dB TYP.
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current ...
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current ...