2SC2270. DESCRIPTION. ·High Collector Power Dissipation. PC=10W(Tc=25℃), PC=1.0W(Ta=25℃). ·High DC Current Gain. : hFE=140~450@VCE=2V,IC=0.5A. hFE=70(Min)@VCE= ...
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This listing is for Two (2) pieces of an IC 2SC2270. These parts are new and unused. We may have various production codes available for this part so it is ...
Size:216K inchange semiconductor 2sc2270.pdf · 2SC2270. isc Silicon NPN Power Transistor 2SC2270DESCRIPTIONHigh Collector Power DissipationP =10W(Tc=25), ...
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$7.19
2pcs TOSHIBA 2SC2270-B TO-126 USA ship ; Item Number. 363012316911 ; UPC. Does not apply ; Brand. TOSHIBA ; Accurate description. 4.6 ; Reasonable shipping cost. 4.5.
Part #: 2SC2270. Download. File Size: 94Kbytes. Page: 2 Pages. Description: SILICON NPN EPITAXIAL TYPE(PCT PROCESS). Manufacturer: Toshiba Semiconductor.
In stock
2SC2270-B 2SC2270 Transistor TO126 NOS #BP ; DARISUS GmbH (65852) ; Approx. $7.26. + $8.55 shipping ; Shipping and Returns · International shipment of items may be ...
Part #: 2SC2270. Download. File Size: 104Kbytes. Page: 3 Pages. Description: Silicon NPN Power Transistors. Manufacturer: Savantic, Inc..
€1.88
NPN is one of the two types of bipolar transistors, consisting of a layer of P-doped semiconductor (the "base") between two N-doped layers. A small current ...
The 2SC2270 transistor can have a current gain of 140 to 450. The gain of the 2SC2270-A will be in the range from 140 to 240, for the 2SC2270-B it will be in ...
THB 23.00
Type Designator: 2SC2270. Material of Transistor: Si. Polarity: NPN. Maximum Collector Power Dissipation (Pc): 10 W. Maximum Collector-Base Voltage |Vcb|: ...
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