DESCRIPTION 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band 24 to 28 volts operation applications.

Size:204K inchange semiconductor 2sc2137.pdf · 2SC2134. isc Silicon NPN Power Transistor 2SC2137DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V ...

Part Number, 2SC2134. Manufacturer, Mitsubishi Electric Semiconductor. Title, NPN Epitaxial Silicon Transistor. Description ... Features .

Part Number:2SC2134 ; Part Type:NPN Transistor ; Collector-base voltage (VCBO):55 V ; Collector cut-off current (ICBO):5000 μA ; DC current gain (hFE):50.

Partname: 2SC2134 ; Description: Silicon NPN epitaxial planar type transistor ; Manufacturer: Mitsubishi Electric Corp. ; Package: T-40E ; Pins: 5.

Part Number, 2SC2134. Manufacturer, Mitsubishi Electric Semiconductor. Title, NPN Epitaxial Silicon Transistor. Description ... Features .

The 2SC2134 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the 2SC2134 transistor has a positively charged layer between two ...

C2134 Datasheet. Part #: 2SC2134. Datasheet: 150Kb/3P. Manufacturer: Mitsubishi Electric Semiconductor. Description: NPN EPITAXIAL PLANAR TYPE(RF POWER ...

IC, 10A. hFE, 20-110. Ptot, 120W. fT, 220MHz. TJ, 175°C. the C2134 is a silicon NPN RF power transistor preferred for use in RF power amplifiers on VHF band ...