2SB676. DESCRIPTION. ·High DC Current Gain-. : hFE = 2000(Min)@ IC= -1A. ·Collector-Emitter Breakdown Voltage-. : V(BR)CEO = -80V(Min). ·Low Collector-Emitter ...
Size:149K jmnic 2sb676.pdf · 2SB676. JMnic Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION With TO-220C package High DC Current Gain ...
Part #, 2SB676. Download, 2SB676 Click to download. File Size, 125.7 Kbytes. Page, 2 Pages. Manufacturer, NJSEMI [New Jersey Semi-Conductor Products, Inc.].
$11.50
2SB676 "Original" Toshiba Darlngton Transistor 2 pcs ; Brand. Toshiba ; Model. 2SB676 ; Accurate description. 5.0 ; Reasonable shipping cost. 5.0 ; Shipping speed.
2SB676 Power Transistor • PNP Darlington 100V, 4A, 30W.• Marked B676 instead of 2SB676• Price is Per One Transistor• Condition : NEW• Brand : ™
$2.20
1PCS/5PCS 2SB676 B676 Silicon PNP Power Transistors TO220 ; Item Number. 225653338099 ; Brand. Toshiba ; MPN. 2SB676 ; Accurate description. 4.9 ; Reasonable ...
Storage Temperature Range. Tstg. -55~150. °C. JEDEC. TO. 220 AB. EIAJ. SC. 46. EQUIVALENT CIRCUIT. COLLECTOR. TOSHIBA. 2. 10 A 1 A. BASEO. Σ45 ΚΩ. =3000.
Part #: 2SB676. Download. File Size: 98Kbytes. Page: 3 Pages. Description: Silicon PNP Power Transistors. Manufacturer: Savantic, Inc..
Part Number, 2SB676. Manufacturer, SavantIC. Title, SILICON POWER TRANSISTOR. Description, ·With TO-220C package ·High DC Current Gain : hFE=2000 @VCE=-2V, ...