2SA1300. PNP EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw. 1of 3. Copyright © 2014 Unisonic Technologies Co., LTD. QW-R208-012.D. SILICON PNP EPITAXAL TYPE.

Transistor2SA1309ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SC3311A4.0 0.2FeaturesHigh foward current transfer ...

TRANSISTOR (PNP). FEATURES Power dissipation. PCM : 0.75 W (Tamb=25℃) Collector current. ICM : -2 A Collector-base voltage. V(BR)CBO : -20 V

2SA1300-TA from Jiangsu Changjing Electronics Technology Co., Ltd. - Bipolar Transistors - BJT is available for JLCPCB assembly, check the stock, ...

2SA1300. 2007-11-01. 1. TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process). 2SA1300. Strobe Flash Applications. Medium Power Amplifier Applications.

2SA1300 - N.O.S. Transistor ; Item Number. 165560021498 ; Brand. MAJOR MFG ; Accurate description. 5.0 ; Reasonable shipping cost. 5.0 ; Shipping speed. 5.0.

Part #: 2SA1300. Download. File Size: 334Kbytes. Page: 3 Pages. Description: Strobe Flash Applications Medium Power Amplifier Applications.

2SA1300. 2003-03-24. 1. TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process). 2SA1300. Strobe Flash Applications. Medium Power Amplifier Applications.

Jan 16, 2016 · Absolute Maximum Ratings (Ta = 25 OC). Parameter. Symbol. Value. Unit. Collector Base Voltage. -VCBO. 20. V. Collector Emitter Voltage.

2SA1300 "Original" Toshiba Transistor 2 pcs ; Item Number. 302202692026 ; Brand. Toshiba ; Model. 2SA1300 ; Accurate description. 5.0 ; Reasonable shipping cost. 5.0.