2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process.
2N6661 is an enhancement-mode (normally-off) tran- sistor that utilizes a vertical DMOS structure and a well- proven silicon-gate manufacturing process.
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A 3300V, 400mΩ SiC MOSFET in a TO-247 4-lead package with a source sense. ... Offers a small footprint, high thermal conductivity, and zero reverse recovery ...
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2N6661 ; Power Dissipation (Max). 6.25W (Tc) ; Operating Temperature. -55°C ~ 150°C (TJ) ; Mounting Type. Through Hole ; Supplier Device Package. TO-39.
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2N6661. RoHS Compliant View Datasheet. Lead Count: 3. Package Type: TO-39. Temp Range: -55C to +150C. Packing Media: Bag (500). 2N6661. MOSFET, N-CHANNEL ...
2N6661: 6.25W N Channel Enhancement MOSFET This MOSFET is packaged in TO-39 package.
2N6661. • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω. • Fast Switching. • Low Threshold Voltage (Logic Level). • Low CISS. • Integral Source-Drain Body Diode.
2N6661. RoHS Compliant View Datasheet. Lead Count: 3. Package Type: TO-39. Temp Range: -55C to +150C. Packing Media: Bag (500). 2N6661. MOSFET, N-CHANNEL ...
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The 2N6661 is a 90V N-channel Enhancement Mode MOSFET designed for use in switching regulators, converters and motor drivers.