2N6387/D. 2N6387, 2N6388. Plastic Medium-Power. Silicon Transistors. These devices are designed for general−purpose amplifier and low−speed switching ...
Description: The 2N6387 and 2N6388 are silicon NPN Darlington power transistors in a TO-220 type package designed for general purpose amplifier and low-speed ...
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Order today, ships today. 2N6387 – Bipolar (BJT) Transistor NPN - Darlington 60 V 10 A 2 W Through Hole TO-220 from NTE Electronics, Inc. Pricing and ...
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Apr 11, 2024 · 2N6387 BULK Transistor by NTE Electronic Inc at Hutch & Son Industrial Electronics, Evansville, IN.
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2N6387 TIN/LEAD Central Semiconductor Bipolar Transistors - BJT NPN 10A 65W 60Vcbo 60Vceo 5.0A 20MHz datasheet, inventory, & pricing.
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2N6387 Transistor, NTE Electronics, NPN Silicon Darlington TO-220 Case For Gen Purpose AMP And Low Speed Switch. 0 Reviews. 2N6387 Transistor NTE Electronics
Features. Collector-Emitter Volt (Vceo): 60V; Collector-Base Volt (Vcbo): 60V; Collector Current (Ic): 10.0A; hfe: 1,000-20,000 @ 5A; Power Dissipation ...
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Order today, ships today. 2N6387 – Bipolar (BJT) Transistor NPN - Darlington 60 V 10 A 2 W Through Hole TO-220AB from Harris Corporation.
VCEO(sus) = 60 Vdc (Min) - 2N6387. = 80 Vdc (Min) - 2N6388. • Low Collector-Emitter Saturation Voltage -. VCE(sat) = 2.0 Vdc (Max) @ IC. = 5.0 Adc - 2N6387, ...
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