The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications. Waiting.
Bipolar junction transistor featuring high current, low saturation voltage and high-speed switching. Learn More.
SGD 95.91
Order today, ships today. 2N6341 – Bipolar (BJT) Transistor NPN 150 V 25 A 200 W Through Hole TO-3 from Microchip Technology. Pricing and Availability on ...
= 150 Vdc (Min) - 2N6341. • High DC Current Gain -. hFE = 30 - 120 @ Ic = 10 Adc. = 12 (Min) @ Ic = 25 Adc. • Low Collector-Emitter Saturation Voltage -. VCE( ...
2N6341 Transistor Datasheet pdf, 2N6341 Equivalent. Parameters and Characteristics.
MAXIMUM RATINGS. Ratings. Symbol. 2N6338 2N6339 2N6340 2N6341. Unit. Collector-Base Voltage. VCBO. 120. 140. 160. 180. V. Collector-Emitter Voltage. VCEO.
Part #: 2N6341. Download. File Size: 57Kbytes. Page: 2 Pages. Description: NPN POWER SILICON TRANSISTOR. Manufacturer: Microsemi Corporation.
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Manufacturer: Microsemi Part Number: JANTX2N6341 Amps: 10 Voltage: 150V Package: TO-3 Lead/Terminal Type: Radial Number Leads/Terminals: 3.
2N6341 ; Collector-emitter Voltage-Max, 1.8V ; Current Rating, 25A ; Emitter Base Voltage (VEBO), 6V ; Gain Bandwidth Product, 40MHz ; hFE Min, 50.