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Oct 28, 2004 · 2N5551. SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. VCBO collector-base voltage open emitter. 2N5550. −. 160. V. 2N5551. −. 180. V. VCEO.
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2N5551 Diotec Semiconductor Bipolar Transistors - BJT BJT, TO-92, 160V, 600mA, NPN datasheet, inventory, & pricing.
2N5551 DIOTEC SEMICONDUCTOR - Transistor: NPN | bipolar; 160V
www.tme.com › ... › NPN THT transistors
Description, symbols of product. Transistor: NPN; bipolar; 160V; 0.6A; 625mW; TO92. Manufacturer part number: 2N5551. TME Symbol: 2N5551-DIO ...
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2N5551-T Rectron Bipolar Transistors - BJT NPN ... 2N5551-T ... Corporate headquarters and logistics center in Mansfield, Texas USA. United States - Flag United ...
2N5551. Description. This device is designed for general ... Symbol. Characteristic. Max. Unit. PD. Total Device ... 2N5551 (Test condition: IC = 10 mA, VCE = 5.0 V) ...
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Jul 9, 2021 · The 2N5551 is an NPN high-voltage transistor in a TO-92 plastic package. It's PNP complements are 2N5400 and 2N5401. The 2N5551 is built to ...
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SnapMagic Search is a free library of symbols & footprints for the 2N5551 by Onsemi and for millions of electronic components. Compatible with Eagle, Altium, ...
The 2N5550 and 2N5551 is a silicon NPN amplifier transistor packaged in a standard TO-92 case. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO. 2N5550.