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High Power Gain - GpE = 8.0 dB (Min) @ f - 400 MHz,. 14.5 dB (Typ) @ 175 MHz - No Emitter Tuning. • Power Output - Pout = 1.0 Watt (Min) @ f = 400 MHz.
2N5160 from qrpparts.com
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2N5160 PNP Silicon RF Power Transistor. 60V/0.4A/1.2W/400MHz. Amplifier, frequency multiplier or oscillator applications. Class A, B, or C output driver, ...
2N5160 Datasheet. Part #: 2N5160. Datasheet: 192Kb/2P. Manufacturer: New Jersey Semi-Conductor Products, Inc.. Description: PNP SILICON AMPLIFIER TRANSISTOR ...
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CP616-2N5160-CM ; Transistor Type. PNP ; Voltage - Collector Emitter Breakdown (Max). 40V ; Frequency - Transition. 500MHz ; Noise Figure (dB Typ @ f). -.
2N5160 from www.ebay.com
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1pcs 2N5160 PNP Silicon Power Transistor ; Quantity. 72 sold. More than 10 available ; Item Number. 220840835317 ; MPN. Does Not Apply ; Brand. Unbranded/Generic ...
2N5160 Datasheet, Equivalent, Cross Reference Search. Type Designator: 2N5160 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation ...
Part #: 2N5160 ; Part Category: Transistors ; Manufacturer: Motorola Solutions, Inc. ; Description: RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra ...
use as Class A, B, or C output driver, or pre-driver stages in VHF and UHF. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. Collector-Emitter Voltage.