This Power MOSFET is the second generation of. STMicroelectronics unique “single feature size” strip-based process. The resulting transistor.
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2N7002 ; Drain to Source Voltage (Vdss). 60 V ; Current - Continuous Drain (Id) @ 25°C · 115mA (Ta) ; Drive Voltage (Max Rds On, Min Rds On). 5V, 10V ; Rds On (Max) ...
Features and benefits · Suitable for logic level gate drive sources · Very fast switching · Surface-mounted package · Trench MOSFET technology ...
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2N2007 Transistor Datasheet pdf, 2N2007 Equivalent. Parameters and Characteristics.
2N2007 Datasheet. Part #: 2N200. Datasheet: 108Kb/1P. Manufacturer: New Jersey Semi-Conductor Products, Inc.. Description: P-N-P GERMANIUM TRANSISTOR.
Part #: 2N2007 ; Part Category: Transistors ; Manufacturer: Semitronics Corp. ; Description: Small Signal Bipolar Transistor, 0.1A I(C), 35V V(BR)CEO, 1-Element, ...
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html ...
This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize ...
This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize ...
