Features Low capacitance: Ct = 4.0 pF MAX High speed switching: trr = 9.0 ns MAX. Wide applications including switching,limitter,clipper.
Order today, ships today. 1SS123(0)-T1B-A – Diode from Renesas Electronics Corporation. Pricing and Availability on millions of electronic components from ...
1SS123. Page 3. NEC. SWITCHING CHARACTERISTICS TEST CIRCUIT. Forward recovery voltage : Vfr. 1 ΚΩ. 450. Circuit Capacitance C≤1 pF. IF = 10 mA. 90 %. 1SS123.
Apr 1, 2010 · Notice. 1. All information included in this document is current as of the date this document is issued. Such information, however, is.
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1SS123 / ISS123 / DIODE / SURFACE MOUNT / 10 PIECES (qzty) ; Item Number. 284735031591 ; Brand. unmarked ; Non-Domestic Product. No ; Accurate description. 4.9.
Part Number, 1SS123. Manufacturer, NEC. Title, SILICON SWITCHING DIODE. Description ... Features ... Published, Mar 23, 2005. Datasheet, PDF File ...
1SS123 Product details ... High speed switching: trr = 9.0 ns MAX. Wide applications including switching,limitter,clipper. Double diode configuration assures ...
1SS123 Silicon Switching Diode . Low capacitance: 4.0 pF MAX High speed switching: trr 9.0 ns MAX. Wide applications including switching,limitter,clipper.
1SS123 - SILICON SWITCHING DIODE. 1SS123_4337182.PDF Datasheet. Part No. 1SS123. Description, SILICON SWITCHING DIODE. File Size, 36.05K / 1 Page. Maker
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