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1N5817G from www.mouser.com
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1N5817G onsemi Schottky Diodes & Rectifiers 1A 20V datasheet, inventory, & pricing.
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1N5817G from www.digikey.com
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1N5817G ; Voltage - DC Reverse (Vr) (Max). 20 V ; Current - Average Rectified (Io). 1A ; Voltage - Forward (Vf) (Max) @ If. 450 mV @ 1 A ; Speed. Fast Recovery =< ...
This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features.
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FEATURED PRODUCTS. COMCHIP TECHNOLOGY ... Designed with soft and fast switching capacity with 120V reverse voltage and 20A forward current. ... Designed with 200V ...
1N5817G from www.microsemi.com
1N5817G,1N5818G,1N5819G. A. Dim. Inches. Millimeter. Minimum Maximum Minimum ... 1N5817G. 1N5818G. 1N5819G. Working. Peak Reverse. Voltage. 20V. 30V. 40V.
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The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ...
1N5817G from octopart.com
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Schottky Rectifier, 1A, 20V, Axial; Repetitive Peak Reverse Voltage:20V; Average Forward Current:1A; Diode Configuration:Single; Diode Case Style:Do-204Al; ...
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The 1N5817G is an axial-lead Schottky Rectifier with epoxy moulded case. This series employs the Schottky barrier principle in a large area metal-to-silicon ...
1N5817, 1N5818, 1N5819 www.vishay.com. Vishay General Semiconductor. Revision: 01-Jul-2020. 1. Document Number: 88525. For technical questions within your ...
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Manufacturer: EIC Manufacturer Part No: 1N5817 Package / Case: DO-41 RoHS: Yes Datasheet: Click Here Specifications Schottky Rectifier Forward Current: 1A