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1M200Z R1G Taiwan Semiconductor Zener Diodes DO-204AL (DO-41) 100 0mW 5% Zener Diode datasheet, inventory, & pricing.
MECHANICAL DATA. ○ Case: DO-204AL (DO-41). ○ Molding compound meets UL 94 V-0 flammability rating. ○ Part no. with suffix "H" means AEC-Q101 qualified.
Features ♢ Low profile package ♢ Built-in strain relief ♢ Glass passivated junction ♢ Low inductance ♢ Typical IR less than 5uA above 11V
Part #: 1M200Z. Download. File Size: 626Kbytes. Page: 5 Pages. Description: 1.0 Watts Glass Passivated Junction Silicon Zener Diode.
€52.00
Taiwan Semiconductor Zener diodes 1M200Z R0, 1W, DO41 housing, 1N47 and 1M series.
1M200Z A0G ; Power - Max. 1 W ; Impedance (Max) (Zzt). 1500 Ohms ; Current - Reverse Leakage @ Vr. 5 µA @ 152 V ; Operating Temperature. -55°C ~ 150°C (TJ).
Features, Applications. Glass Passivated Junction Silicon Zener Diode Voltage Range to 200 Volts 1.0 Watts Peak Power Features.
Order today, ships today. 1M200Z R1G – Zener Diode 200 V 1 W ±5% Through Hole DO-204AL (DO-41) from Taiwan Semiconductor Corporation.
1M200Z datasheet ; TRANSYS Electronics Limited, 200 V, 1 W, glass passivated junction silicon zener diode. Others with the same file for datasheet: 1M180Z, ...
1N4740A – 1M200Z. Taiwan Semiconductor. 1. Version: O2104. 1W, 10V - 200V Zener ... “x” defines voltage from 10V (1N4740A) to 200V (1M200Z). 2. “H” means AEC ...