Sep 10, 2012 · 08P06P. Yes. ° Qualified according to AEC Q101. Non dry. Page 2. SPD08P06P G G. Parameter. Symbol Conditions. Unit min. typ. max. Thermal ...
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Specifications ; Vds - Drain-Source Breakdown Voltage: 60 V ; Id - Continuous Drain Current: 8.83 A ; Rds On - Drain-Source Resistance: 230 mOhms ; Vgs - Gate- ...
08P06P Datasheet. Part #: SPB08P06P. Datasheet: 96Kb/9P. Manufacturer: Infineon Technologies AG. Description: SIPMOS Power-Transistor. 8 Results.
$16.56
Features · Our company mainly focuses on spot goods, with a large amount of inventory in stock. · The main business products include: field-effect transistors, ...
SPD08P06P G. Parameter Symbol Conditions Unit. min. typ. max. Dynamic characteristics. Input capacitance Ciss - 335 420 pF. Output capacitance Coss - 105 135.
$5.80
3PCS SPD08P06P G MOSFET P-CH 60V 8.83A TO-252 SPD08P06PG 08P06 SPD08P06. Chips Gate (43109); 99.4% positive feedback ...
08P06 Datasheet. 219Kb/4P. Part #: F08P06S. Manufacturer: Goodwork Semiconductor Co., Ltd .. Description: Dual-P Enhancement MOSFET. 31 Results.
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08P06P SPP08P06P new spot TO-220MOS field effect tube 8.8A 60V. Delivery. Shipping: US $1.49. Estimated delivery between May 26 - 30 ,item ships within 9 days.
Marking: 08P06P. Part #: SPD08P06PG. Download. File Size: 605Kbytes. Page: 9 Pages. Description: SIPMOS짰 Power-Transistor.